Temperature dependence of the anomalous Hall effect in ferromagnetic (Ga,Mn)As epilayers

Y. S. Kim, H. K. Choi, Z. G. Khim, J. C. Woo, Y. D. Park, S. H. Chun

Research output: Contribution to journalConference articlepeer-review

Abstract

We fabricated high quality (Ga,Mn)As epilayers by low-temperature molecular beam epitaxy and studied the magnetic and magneto-transport properties in detail. In particular, we investigated the relation between the longitudinal and the transverse Hall resistivity over a wide range of temperatures. It turned out that the anomalous Hall coefficient scaled linearly with the longitudinal resistivity, which seems to imply that the skew scattering is the primary source of the anomalous Hall effect in (Ga,Mn)As if we consider classical models only. However, we cannot rule out other mechanisms because of the narrow range of resistivity investigated.

Original languageEnglish
Pages (from-to)697-700
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number3
DOIs
StatePublished - 2006
Event32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany
Duration: 18 Sep 200522 Sep 2005

Fingerprint

Dive into the research topics of 'Temperature dependence of the anomalous Hall effect in ferromagnetic (Ga,Mn)As epilayers'. Together they form a unique fingerprint.

Cite this