TY - JOUR
T1 - Surface spin accumulation due to the inverse spin Hall effect in WS2 crystals
AU - Dastgeer, Ghulam
AU - Khan, Muhammad Farooq
AU - Nazir, Ghazanfar
AU - Afzal, Amir Muhammad
AU - Aftab, Sikandar
AU - Akbar, Kamran
AU - Chun, Seung Hyun
AU - Eom, Jonghwa
N1 - Publisher Copyright:
© 2018 IOP Publishing Ltd.
PY - 2019/1
Y1 - 2019/1
N2 - Applications of semiconductors in spintronics are being developed and revolutionized to fabricate nanostructures in which the spin current is injected, detected and manipulated. The manifestation of the spin Hall effect (SHE) in semiconductors with a simple geometry is still a challenge to implement in spintronics. In this work, we demonstrate the distinct electrical detection of the inverse spin Hall effect (ISHE) in WS2 multilayer crystals at temperatures ranging from 4.2 K to 300 K. The novel idea of this study is the electrical detection of the ISHE in WS2 using an in-plane spin-polarized current, which is realized using non-ferromagnetic electrodes on the top and bottom surfaces of the WS2 channel. The flow alteration of spin-polarized current results in a polarity change in the inverse spin Hall signal. By analyzing the magnitude of the ISHE, we estimated a spin diffusion length of ∼250 nm, spin Hall angle of ∼0.028, spin polarization of ∼0.20 and spin lifetime of ∼560 ps in WS2-layered crystals at room temperature. The ISHE in layered, 2D materials, including WS2 crystals, provides a new methodology to develop low-power and fast memory devices to write, read and store information.
AB - Applications of semiconductors in spintronics are being developed and revolutionized to fabricate nanostructures in which the spin current is injected, detected and manipulated. The manifestation of the spin Hall effect (SHE) in semiconductors with a simple geometry is still a challenge to implement in spintronics. In this work, we demonstrate the distinct electrical detection of the inverse spin Hall effect (ISHE) in WS2 multilayer crystals at temperatures ranging from 4.2 K to 300 K. The novel idea of this study is the electrical detection of the ISHE in WS2 using an in-plane spin-polarized current, which is realized using non-ferromagnetic electrodes on the top and bottom surfaces of the WS2 channel. The flow alteration of spin-polarized current results in a polarity change in the inverse spin Hall signal. By analyzing the magnitude of the ISHE, we estimated a spin diffusion length of ∼250 nm, spin Hall angle of ∼0.028, spin polarization of ∼0.20 and spin lifetime of ∼560 ps in WS2-layered crystals at room temperature. The ISHE in layered, 2D materials, including WS2 crystals, provides a new methodology to develop low-power and fast memory devices to write, read and store information.
KW - inverse spin Hall effect
KW - spin diffusion length
KW - spinorbit interaction
KW - transition metal dichalcogenides
KW - tungsten disulfide
UR - http://www.scopus.com/inward/record.url?scp=85059228151&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/aae7e8
DO - 10.1088/2053-1583/aae7e8
M3 - Article
AN - SCOPUS:85059228151
SN - 2053-1583
VL - 6
JO - 2D Materials
JF - 2D Materials
IS - 1
M1 - 011007
ER -