Proximity-Induced Magnetism Enhancement Emerged in Chiral Magnet MnSi/Topological Insulator Bi2Se3 Bilayer

Won Young Choi, Jae Ho Jeon, Hyun Woo Bang, Woosuk Yoo, Sahng Kyoon Jerng, Seung Hyun Chun, Sunghun Lee, Myung Hwa Jung

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A proximity effect between magnetic materials and topological surface states can generate and modulate the localized spins without complicated material structures, but its origin is not clearly verified. MnSi single layer and MnSi/Bi2Se3 bilayer on Al2O3(001) substrates are fabricated by magnetron co-sputtering and molecular beam epitaxy systems, in which a large proximity effect between the chiral magnetic structure and the topological surface states is manifested. The magnetic and electronic properties of both samples are meticulously compared and the proximity-induced magnetism enhancement in the MnSi/Bi2Se3 bilayer is found. Interestingly, this effect persists up to temperatures above 300 K. Furthermore, for the MnSi/Bi2Se3 bilayer, the increase of charge carrier density and the decrease of carrier mobility near the Curie temperature TC = 40 K are observed, which can mediate the ferromagnetic exchange interaction enhancing the magnetization. The finding provides insight into a new platform to consist of materials with distinct topological phases for future spintronic devices.

Original languageEnglish
Article number2000124
JournalAdvanced Quantum Technologies
Volume4
Issue number2
DOIs
StatePublished - Feb 2021

Bibliographical note

Publisher Copyright:
© 2020 Wiley-VCH GmbH

Keywords

  • chiral magnetic structure
  • magnetic proximity effect
  • magnetism
  • thin films
  • topological insulators

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