One-Step Passivation of Both Sulfur Vacancies and SiO2 Interface Traps of MoS2 Device

Byungwook Ahn, Yoonsok Kim, Meeree Kim, Hyang Mi Yu, Jaehun Ahn, Eunji Sim, Hyunjin Ji, Hamza Zad Gul, Keun Soo Kim, Kyuwook Ihm, Hyoyoung Lee, Eun Kyu Kim, Seong Chu Lim

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS2 FET. By applying back-gate bias, protons from an H-TFSI droplet are injected into the MoS2, penetrating deeply enough to reach the SiO2 gate oxide. The characterizations employing low-temperature transport and deep-level transient spectroscopy (DLTS) studies reveal that the trap density of S vacancies in MoS2 drops to the lowest detection level. The temperature-dependent mobility plot on the SiO2 substrate resembles that of the h-BN substrate, implying that dangling bonds in SiO2 are passivated. The carrier mobility on the SiO2 substrate is enhanced by approximately 2200% after the injection.

Original languageEnglish
Pages (from-to)7927-7933
Number of pages7
JournalNano Letters
Volume23
Issue number17
DOIs
StatePublished - 13 Sep 2023

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society.

Keywords

  • MoS
  • bulk trap
  • concurrent passivation
  • interface trap
  • proton injection
  • sulfur vacancy

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