Abstract
Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS2 FET. By applying back-gate bias, protons from an H-TFSI droplet are injected into the MoS2, penetrating deeply enough to reach the SiO2 gate oxide. The characterizations employing low-temperature transport and deep-level transient spectroscopy (DLTS) studies reveal that the trap density of S vacancies in MoS2 drops to the lowest detection level. The temperature-dependent mobility plot on the SiO2 substrate resembles that of the h-BN substrate, implying that dangling bonds in SiO2 are passivated. The carrier mobility on the SiO2 substrate is enhanced by approximately 2200% after the injection.
Original language | English |
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Pages (from-to) | 7927-7933 |
Number of pages | 7 |
Journal | Nano Letters |
Volume | 23 |
Issue number | 17 |
DOIs | |
State | Published - 13 Sep 2023 |
Bibliographical note
Publisher Copyright:© 2023 American Chemical Society.
Keywords
- MoS
- bulk trap
- concurrent passivation
- interface trap
- proton injection
- sulfur vacancy