Abstract
Rapid thermal processing (RTP) has become a key fabrication technology for advanced integrated circuits. By virtue of tremendous advances in computing resources over the past decades, numerical simulations provide that semiconductor processing industry with one of the most promising and productive tools especially for significant time-to-market reduction. Numerical modeling offers the understanding of the highly coupled physics in RTP, such as radiative heat transfer, transient flow, and complex geometry of RTP chamber. This paper deals with numerical analysis of three-dimensional, unsteady heat and fluid flow in a complex RTP chamber. A commercial package, STAR-CD, is used to solve the governing equations by an unstructured finite volume method. Surface radiative heat transfer is the most dominant mode of heat transfer in RTP and properly implemented in this simulation. The validation of present simulation has been conducted in three-fold; (1) convective heat transfer considering rotation effect; (2) evaluation of view factor; and (3) comparison with experiment. The results indicate that the proposed numerical methodologies are robust. Parametric studies while varying lamp power, lamp configuration, radiative properties and chamber configuration have been also conducted to investigate the uniformity of wafer temperature.
| Original language | English |
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| Pages | 1208-1212 |
| Number of pages | 5 |
| State | Published - 2001 |
| Event | 2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001) - Pusan, Korea, Republic of Duration: 12 Jun 2001 → 16 Jun 2001 |
Conference
| Conference | 2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001) |
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| Country/Territory | Korea, Republic of |
| City | Pusan |
| Period | 12/06/01 → 16/06/01 |