Magnetization dependent photoconductivity of Ga1-xMn xAs/ZnSe diode structures

S. H. Chun; J. P. Yu; J. S. Lee; Jong Chun Woo; S. J. Potashnik; P. Schiffer; N. Samarth

Magnetization dependent photoconductivity of Ga_1-xMn _xAs/ZnSe diode structures

S. H. Chun, J. P. Yu, J. S. Lee, Jong Chun Woo, S. J. Potashnik, P. Schiffer, N. Samarth

Department of Physics and Astronomy

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have observed a significant photoconductivity in a diode structure consisting of Ga_1-xMn_xAs (x = 0.04, p-type) and n-ZnSe separated by a recrystallized GaAs template. Under forward bias, the photoconductivity increases almost exponentially on lowering the temperature, shows a peak near 110 K, and then decreases by more than two orders of magnitude as Ga_1-xMn_xAs becomes ferromagnetic (Tc = 80 K). Such magnetization dependence is confirmed by applying an external magnetic field.

Original language	English
Pages (from-to)	135-138
Number of pages	4
Journal	Institute of Physics Conference Series
Volume	184
State	Published - 2005
Event	31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: 12 Sep 2004 → 16 Dec 2004

Cite this

@article{a46ae7f4b5e4401d8256109e5feda708,

title = "Magnetization dependent photoconductivity of Ga1-xMn xAs/ZnSe diode structures",

abstract = "We have observed a significant photoconductivity in a diode structure consisting of Ga1-xMnxAs (x = 0.04, p-type) and n-ZnSe separated by a recrystallized GaAs template. Under forward bias, the photoconductivity increases almost exponentially on lowering the temperature, shows a peak near 110 K, and then decreases by more than two orders of magnitude as Ga1-xMnxAs becomes ferromagnetic (Tc = 80 K). Such magnetization dependence is confirmed by applying an external magnetic field.",

author = "Chun, {S. H.} and Yu, {J. P.} and Lee, {J. S.} and Woo, {Jong Chun} and Potashnik, {S. J.} and P. Schiffer and N. Samarth",

year = "2005",

language = "English",

volume = "184",

pages = "135--138",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

note = "31st International Symposium of Compound Semiconductors 2004 ; Conference date: 12-09-2004 Through 16-12-2004",

}

TY - JOUR

T1 - Magnetization dependent photoconductivity of Ga1-xMn xAs/ZnSe diode structures

AU - Chun, S. H.

AU - Yu, J. P.

AU - Lee, J. S.

AU - Woo, Jong Chun

AU - Potashnik, S. J.

AU - Schiffer, P.

AU - Samarth, N.

PY - 2005

Y1 - 2005

N2 - We have observed a significant photoconductivity in a diode structure consisting of Ga1-xMnxAs (x = 0.04, p-type) and n-ZnSe separated by a recrystallized GaAs template. Under forward bias, the photoconductivity increases almost exponentially on lowering the temperature, shows a peak near 110 K, and then decreases by more than two orders of magnitude as Ga1-xMnxAs becomes ferromagnetic (Tc = 80 K). Such magnetization dependence is confirmed by applying an external magnetic field.

AB - We have observed a significant photoconductivity in a diode structure consisting of Ga1-xMnxAs (x = 0.04, p-type) and n-ZnSe separated by a recrystallized GaAs template. Under forward bias, the photoconductivity increases almost exponentially on lowering the temperature, shows a peak near 110 K, and then decreases by more than two orders of magnitude as Ga1-xMnxAs becomes ferromagnetic (Tc = 80 K). Such magnetization dependence is confirmed by applying an external magnetic field.

UR - http://www.scopus.com/inward/record.url?scp=33644521723&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33644521723

SN - 0951-3248

VL - 184

SP - 135

EP - 138

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - 31st International Symposium of Compound Semiconductors 2004

Y2 - 12 September 2004 through 16 December 2004

ER -

Magnetization dependent photoconductivity of Ga1-xMn xAs/ZnSe diode structures

Abstract

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Magnetization dependent photoconductivity of Ga_1-xMn _xAs/ZnSe diode structures