Abstract
A recrystallized GaAs template was used to fabricate ferromagnetic Ga1-xMnxAs epilayers on ZnSe. The magnetic and transport properties of the epilayers grown using the recrystallized GaAs template were compared to those of Ga1-xMnxAs grown directly on GaAs. The structural defects were found to play an important role in the growth of the heterostructures.
Original language | English |
---|---|
Pages (from-to) | 1266-1269 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 3 |
DOIs | |
State | Published - May 2002 |
Event | 20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: 1 Oct 2001 → 3 Oct 2001 |