Abstract
Recently, attempts to overcome the physical limits of memory devices have led to the development of promising materials and architectures for next-generation memory technology. The selector device is one of the essential ingredients of high-density stacked memory systems. However, complicated constituent deposition conditions and thermal degradation are problematic, even with effective selector device materials. Herein, we demonstrate the highly stable and low-threshold voltages of vanadium pentoxide (V 2 O 5 ) nanosheets synthesized by facile chemical vapor deposition, which have not been previously reported on the threshold switching (TS) properties. The electrons occupying trap sites in poly-crystalline V 2 O 5 nanosheet contribute to the perfectly symmetric TS feature at the bias polarity and low-threshold voltages in V 2 O 5 , confirmed by high-resolution transmission electron microscopy measurements. Furthermore, we find an additional PdO interlayer in V 2 O 5 nanodevices connected with a Pd/Au electrode after thermal annealing treatment. The PdO interlayer decreases the threshold voltages, and the I on /I off ratio increases because of the increased trap density of V 2 O 5 . These studies provide insights into V 2 O 5 switching characteristics, which can support low power consumption in nonvolatile memory devices.
Original language | English |
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Pages (from-to) | 42875-42881 |
Number of pages | 7 |
Journal | ACS Applied Materials and Interfaces |
Volume | 10 |
Issue number | 49 |
DOIs | |
State | Published - 12 Dec 2018 |
Bibliographical note
Publisher Copyright:© 2018 American Chemical Society.
Keywords
- nanosheets
- selector devices
- thermal annealing treatment
- threshold switching
- vanadium pentoxide