1996 Ph.D., KAIST
1991 M.S., KASIT
1989 B.S., Kyungpook National University
• (2006.03-present) Sejong University Professor
• (2013.03-2014.02) U.C. Davis exchange professor
• (2004.07-2006.02) Samsung Electronics
• (2001.04-2004.03) MIT, Post-doctor
• (1996.02-2001.03) Hynix, Senor Engineer.
• Semiconductor devices and fabrication
• 2D, nanoscale devices
• Image sensor devices
• “Growth of few layered graphene on a thin cobalt film on Si/SiO2 substrate,” E. Kim, H. An, H. Jang, W. Cho, W. Lee, and J. Jung, J. Chem Vapor Dep. (2011).
• “Hole mobility and device characteristics of SiGe dual channel structure,” J. Jung, Current Applied Physics 47-50 (2009).
• “Decreasing dark current of complementary metal oxide semiconductor image sensor by new postmetallizatrion annealing and UV curing,” J.Jung, D.W.Kwon, J.Kim, JJAP, 47-1A, 139-141 (2008).
• “Application of plasam-doping (PLAD) technique to reduce dark current of CMOS image sensors, C. Moon, J. Jung, D. Kwon, J. Yoo, D. Lee, and K.Kim, IEEE Electron Device Letters., 28-2 (2007).
• “Reduction of random noise in complementary metal oxide semiconductor image sensors,” J.Jung, D. Kwon, and D. Lee, JJAP, p3466-3469 (2006).
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):